Magnesium doped zinc oxide (MgxZn1−xO) thin films were synthesized on silicon substrate through sol–gel process. Mg0.15Zn0.85O thin films were annealed at 500–800 °C and ZnO, Mg0.1Zn0.9O, Mg0.05Zn0.95O thin films were annealed at 600 °C for 60 min, respectively. The results show that all the samples are of a hexagonal wurtzite structure of ZnO. The surface morphology is strongly dependent on mean grain size and surface fluctuation. Fourier transform infrared spectra reveal that the vibration peak at 420 cm−1 is of the intrinsic lattice absorption of ZnO. The peak at 1083 cm−1 belongs to SiImage removed.OImage removed.Si asymmetric stretching vibration. Photoluminescence spectra show that the ultraviolet emission (365–400 nm) and the broad visible emission (469–569 nm) are observed. In particular, Mg0.05Zn0.95O thin film annealed at 600 °C exhibits the highest photocatalytic activity, degrading MO by almost 85.8% after 180 min illumination. The photocatalytic activity of the thin film is a synergistic effect defined by grain size, roughness factor, oxygen defects and amorphous MgO.


Changlong Liu,Fengjiao Shang,Guangcai Pan,Feng Wang,Zhitao Zhou,Wanbing Gong,Zhenfa Zi,Yiyong Wei,Xiaoshuang Chen,Jianguo Lv,Gang He,Miao Zhang,Xueping Song,Zhaoqi Sun.


Applied Surface Science,305,753-759(2014)